Q 1:Consider an intrinsic silicon bar of cross-section $4\text{cm}^2$ and length $0.35 \text{ cm}$ at room temperature $300^\circ \text{K}$. An average field of $20\text{V/cm}$ is applied across the ends of the silicon barCalculate:Electrons and hole components of current densityTotal current in the barResistivity of the barGiven: Electron mobility ($\mu_n$) is $1400 \text{ cm}^2/\text{V-s}$Hole mobility ($\mu_p$) is $450 \text{ cm}^2/\text{V-s}$Intrinsic carrier concentration ($n_i$) of Si at room temperature ($300^\circ \text{K}$) = $1.5 \times 10^{10}/\text{cm}^3$If now donor impurity to the extent of 1 part in $10^8$ atoms of Si is added. Find the density of minority carriers and the resistivity, given that the Number of Si atoms/$\text{m}^3 = 4.99 \times 10^{28}$Q 2:Calculate the drift current density for a given semiconductor. Consider silicon at T = 300 K doped with arsenic atoms at a concentration of $N_d = 8 \times 10^{15}/\text{cm}^3$. Assume mobility values of $\mu_n = 1500 \text{ cm}^2/\text{V-s}$ and $\mu_p = 400 \text{ cm}^2/\text{V-s}$. Assume the applied electric field is $100 \text{ V/cm}$.Q 3:Plot $i_D(t)$, $v_D(t)$ and $v_O(t)$ for the following circuit shown below assuming $V_\phi=0.6\text{V}$ for diode.[Circuit diagram showing a voltage source $v_I$, a diode $D$, and a resistor $R$]The wave form of input $v_I = 15 \sin(200t - 25)$Q4:Assuming $V_\phi=0.6\text{V}$ for each diode, find the values of $I$ and $V$ in the following circuits:(a) [Circuit with +5V source, 2.5 k$\Omega$ resistor, diode to ground](b) [Circuit with +5V source, 2.5 k$\Omega$ resistor, reversed diode to ground](c) [Circuit with diode from ground, 2.5 k$\Omega$ resistor to -5V](d) [Circuit with reversed diode from ground, 2.5 k$\Omega$ resistor to -5V](e) [Circuit with +2V and +1V inputs, two diodes meeting at a node with a 1 k$\Omega$ resistor to ground]Q5:Assuming $V_\phi=0.6\text{V}$ for each diode, find the values of $I$, $I_D$, and $V$ in the following circuits:(a) [Circuit with +10V source, 10 k$\Omega$ resistor, two diodes ($D_1$, $D_2$), and a 5 k$\Omega$ resistor to -10V](b) [Circuit with +10V source, 5 k$\Omega$ resistor, two diodes ($D_1$, $D_2$), and a 10 k$\Omega$ resistor to -10V]Q6:*2.17 Sketch $v_o$ versus time for the circuit in Figure P2.17 with the input shown. Assume $V_\gamma = 0$.[Figure P2.17: Bridge rectifier circuit with resistors $R_1=2.2\text{ k}\Omega$, $R_2=2.2\text{ k}\Omega$, and Load $R_L=2.2\text{ k}\Omega$]Input graph shown: Sine wave with peak +40 and -40.Q7:*2.18 (a) Sketch $v_o$ versus time for the circuit in Figure P2.18. The input is a sine wave given by $v_i = 10 \sin \omega t \text{ V}$. Assume $V_\gamma = 0$. (b) Determine the rms value of the output voltage.[Figure P2.18: Bridge rectifier circuit layout with resistors $R_1=2.2\text{ k}\Omega$, $R_2=2.2\text{ k}\Omega$, and Load $R_L=6.8\text{ k}\Omega$]